1/8 december 2002 STN7NF10 n-channel 100v - 0.055 w -5asot-223 low gate charge stripfet? ii power mosfet n typical r ds (on) = 0.055 w n application oriented characterization description this power mosfet series realized with stmicro- electronics unique stripfet process has specifical- ly been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer application. it is also intended for any application with low gate charge drive requirements. applications n high-efficiency dc-dc converters n ups and motor control absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STN7NF10 100 v < 0.065 w 5a symbol parameter value unit v ds drain-source voltage (v gs =0) 100 v v dgr drain-gate voltage (r gs =20k w ) 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 5a i d drain current (continuous) at t c = 100c 3.4 a i dm ( ) drain current (pulsed) 20 a p tot total dissipation at t c = 25c 3.3 w derating factor 0.026 w/c t stg storage temperature C55 to 150 c t j operating junction temperature sot-223 1 2 2 3 internal schematic diagram
STN7NF10 2/8 thermal data note: (*) when mounted on 1 in 2 fr-4 board,2 oz cu, t<10s. note: (**) when mounted on minimum footprint. electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic rthj-pcb thermal resistance junction-pcb max(*) 38 c/w rthj-pcb thermal resistance junction-pcb max(**) 100 c/w t l maximum lead temperature for soldering purpose (1.6 mm from case,for 10s) 260 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 234v r ds(on) static drain-source on resistance v gs =10v,i d = 1.5 a 0.055 0.065 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v,i d =1.5a 12 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 870 pf c oss output capacitance 125 pf c rss reverse transfer capacitance 52 pf
3/8 STN7NF10 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =50v,i d =12a r g = 4.7 w v gs =10v (see test circuit, figure 3) 58 ns t r rise time 45 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =80v,i d =24a, v gs =10v 30 6 10 41 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =50v,i d =12a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 49 17 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5 a i sdm (1) source-drain current (pulsed) 20 a v sd (2) forward on voltage i sd = 5 a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100a/s, v dd =30v,t j = 150c (see test circuit, figure 5) 100 375 7.5 ns nc a
STN7NF10 4/8 thermal impedence safe operating area transconductance static drain-source on resistance output characteristics transfer characteristics
5/8 STN7NF10 gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics
STN7NF10 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STN7NF10 dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
STN7NF10 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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